In-situ characterization of electron-assisted regeneration of Cz-Si solar cells

authored by

L. Helmich, D.C. Walter, D. Bredemeier, R. Falster, V.V. Voronkov, Jan Schmidt

Abstract

We examine the regeneration kinetics of passivated emitter and rear solar cells (PERCs) fabricated on boron-doped p-type Czochralski-grown silicon wafers in darkness by electron injection via application of a forward bias voltage at elevated temperature (140 °C) in order to discriminate between electronic and photonic effects. Based on these dark regeneration experiments, we address the existing inconsistency regarding the measured linear dependence of the regeneration rate constant on the excess carrier density. Using the method of dark regeneration by current injection into the solar cell, we are able to measure the total recombination current of the solar cell at the actual regeneration temperature under applied voltage, i.e., at the physically relevant regeneration conditions. The direct comparison of the regeneration rate constant as a function of electronically injected carrier concentration in the dark and the regeneration rate constant during illumination clearly shows that the regeneration is a purely electronically stimulated effect and that photons are not directly involved.

Organisation(s)

Institute of Solid State Physics

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Solar Energy Materials and Solar Cells

Volume

185

Pages

283-286

No. of pages

4

ISSN

0927-0248

Publication date

10.2018

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1016/j.solmat.2018.05.023 (Access: Closed)