Reassessment of intrinsic lifetime limit in n-type crystalline silicon and implication on maximum solar cell efficiency

authored by: Boris A. Veith-Wolf, Sören Schäfer, Rolf Brendel, Jan Schmidt
Abstract: Unusually high carrier lifetimes are measured by photoconductance decay on n-type Czochralski-grown silicon wafers of different doping concentrations, passivated using plasma-assisted atomic-layer-deposited aluminum oxide (Al₂O₃) on both wafer surfaces. The measured effective lifetimes significantly exceed the intrinsic lifetime limit previously reported in the literature. Several prerequisites have to be fulfilled to allow the measurement of such high lifetimes on Al₂O₃-passivated n-type silicon wafers: (i) large-area wafers are required to minimize the impact of edge recombination via the Al₂O₃-charge-induced inversion layer, (ii) an exceptionally homogeneous Al₂O₃ surface passivation is required, and (iii) very thick silicon wafers are needed. Based on our lifetime measurements on n-type silicon wafers of different doping concentrations, we introduce a new parameterization of the intrinsic lifetime for n-type crystalline silicon. This new parameterization has implications concerning the maximum reachable efficiency of n-type silicon solar cells, which is larger than assumed before.
Organisation(s): Institute of Solid State Physics
External Organisation(s): Institute for Solar Energy Research (ISFH)
Type: Article
Journal: Solar Energy Materials and Solar Cells
Volume: 186
Pages: 194-199
No. of pages: 6
ISSN: 0927-0248
Publication date: 11.2018
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films
Sustainable Development Goals: SDG 7 - Affordable and Clean Energy
Electronic version(s): https://doi.org/10.1016/j.solmat.2018.06.029 (Access: Closed)