Perimeter recombination in 25%-efficient IBC solar cells with passivating POLO contacts for both polarities
- authored by
- Felix Haase, Sören Schäfer, Christina Klamt, Fabian Kiefer, Jan Krügener, Rolf Brendel, Robby Peibst
- Abstract
We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2×2 cm2-sized cell is processed on a 100mmwafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 ω cm and even 0.9%abs for a wafer resistivity of 80 ω cm.
- Organisation(s)
-
Laboratory of Nano and Quantum Engineering
Institute of Electronic Materials and Devices
Institute of Solid State Physics
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- IEEE journal of photovoltaics
- Volume
- 8
- Pages
- 23-29
- No. of pages
- 7
- ISSN
- 2156-3381
- Publication date
- 01.2018
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/jphotov.2017.2762592 (Access:
Closed)
