Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool

authored by: P. Engelhart, N. P. Harder, A. Merkle, R. Grischke, R. Meyer, R. Brendel
Abstract: We employ laser technology as a key processing tool for fabricating our novel RISE (Rear Interdigitated Single Evaporation) silicon solar cells. The contactless production sequence incorporates a self-aligning single evaporation step for metallising the interdigitated rear contacts. In this paper, we compare in detail the performance of two types of RISE solar cells with different contact formations to the base: (a) back surface field formation via aluminium doping produced by local laser-firing of the aluminium contact (Al-BSF) and (b) local diffusion of boron (B-BSF). The best solar cell with B-BSF has an AM1.5 efficiency of 21.5 %. The efficiencies of RISE solar cells with Al-BSF are considerably lower due to 5-10% lower short-circuit currents. We ascribe these photocurrent losses to a less-efficient BSF effect of the laser-fired contact compared to a boron-diffused BSF.
External Organisation(s): Institute for Solar Energy Research (ISFH)
Type: Conference contribution
Pages: 900-904
No. of pages: 5
Publication date: 2006
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
Sustainable Development Goals: SDG 7 - Affordable and Clean Energy
Electronic version(s): https://doi.org/10.1109/WCPEC.2006.279601 (Access: Closed)