Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses
- authored by
- Peter Engelhart, Sonja Hermann, Tobias Neubert, Heiko Plagwitz, Rainer Grischke, Rüdiger Meyer, Ulrich Klug, Aart Schoonderbeek, Uwe Stute, Rolf Brendel
- Abstract
We apply ultra-short pulse laser ablation to create local contact openings in thermally grown passivating SiO2 layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τpulse ∼ 10ps. The specific contact resistance that we reach with evaporated aluminium on a 100Ω/sq and P-dijfused emitter is in the range of 0-3-1 mΩ cm2. Ultra-short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J0e= (6·2 ±1·6) × 10-13 A/cm2 on the laser-treated areas after a selective emitter diffusion with Rsheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO 2 layer removed by HF-etching. Thus, laser ablation of dielectrics with pulse durations of about 10ps is well suited to fabricate high-efficiency Si solar cells.
- Organisation(s)
-
Institute of Solid State Physics
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
Laser Zentrum Hannover e.V. (LZH)
- Type
- Article
- Journal
- Progress in Photovoltaics: Research and Applications
- Volume
- 15
- Pages
- 521-527
- No. of pages
- 7
- ISSN
- 1062-7995
- Publication date
- 09.2007
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1002/pip.758 (Access:
Closed)
