Interconnect-shingling

Maximizing the active module area with conventional module processes

authored by

Henning Schulte-Huxel, Susanne Blankemeyer, Arnaud Morlier, Rolf Brendel, Marc Köntges

Abstract

We present a module fabrication process enabling gap-free interconnection of c-Si solar cells using solder-based interconnection technology with ribbons or wires. The interconnect-shingling process increases the module efficiency by avoiding the gaps between the solar cells. The process is applicable to bifacial cells and uses well-proven interconnection technologies. In contrast to previous adhesive-based shingled modules, the current transport is supported by interconnects, thus reducing the silver consumption for the cells’ metallization and avoiding cell overlap. We lay down the cells on structured encapsulant layers to reduce mechanical stress at the cell edges during lamination. Alternatively, the lamination process can be adapted to allow the encapsulant to reflow. This also results in a low pressure at sensitive cell parts. Both approaches avoid crack formation. We demonstrate the interconnect-shingling process with a proof-of-concept module having a aperture area efficiency of 22.1%. Applying 200 thermal cycles does not cause any crack formation.

Organisation(s)

Solar Energy Section

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Solar Energy Materials and Solar Cells

Volume

200

ISSN

0927-0248

Publication date

15.09.2019

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1016/j.solmat.2019.109991 (Access: Closed)