Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide
- authored by
- Mark Kerr, Jan Schmidt, Andres Cuevas
- Abstract
Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
- External Organisation(s)
-
Australian National University
- Type
- Article
- Journal
- Progress in Photovoltaics: Research and Applications
- Volume
- 8
- Pages
- 529-536
- No. of pages
- 8
- ISSN
- 1062-7995
- Publication date
- 02.11.2000
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6 (Access:
Closed)
