Autodiffusion
A novel method for emitter formation in crystalline silicon thin-film solar cells
- authored by
- A. Wolf, B. Terheiden, R. Brendel
- Abstract
The in situ formation of an emitter in monocrystalline silicon thin-film solar cells by solid-state diffusion of dopants from the growth substrate during epitaxy is demonstrated. This approach, that we denote autodiffusion, combines the epitaxy and the diffusion into one single process. Layer-transfer with porous silicon (PSI process) is used to fabricate n-type silicon thin-film solar cells. The cells feature a boron emitter on the cell rear side that is formed by autodiffusion. The sheet resistance of this autodiffused emitter is 330 Ω/□- An independently confirmed conversion efficiency of (14.5 ± 0.4)% with a high short circuit current density of (33.3 ± 0.8) mA/cm2 is achieved for a 2 × 2 cm2 large cell with a thickness of (24 ± 1) μm. Transferred n-type silicon thin films made from the same run as the cells show effective carrier lifetimes exceeding 13 μs. From these samples a bulk diffusion ength L > 111 μm is deduced. Amorphous silicon is used to passivate the rear surface of these samples after the layer-transfer resulting in a surface recombination velocity lower than 38cm/s.
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- Progress in Photovoltaics: Research and Applications
- Volume
- 15
- Pages
- 199-210
- No. of pages
- 12
- ISSN
- 1062-7995
- Publication date
- 05.2007
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1002/pip.727 (Access:
Closed)
