HVPE-Grown GaAs//Si Tandem Device Performance

authored by

Kaitlyn Vansant, John Simon, Manuel Schnabel, John Geisz, Kevin Schulte, Aaron Ptak, Michelle Young, David Guiling, Waldo Olavarria, Michael Rienaecker, Henning Schulte-Huxel, Raphael Niepelt, Sarah Kajari-Schroeder, Rolf Brendel, Robby Peibst, Adele Tamboli

Abstract

The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

External Organisation(s)

Colorado School of Mines (CSM)
Institute for Solar Energy Research (ISFH)
National Renewable Energy Laboratory

Type

Conference contribution

Pages

2776-2778

No. of pages

3

Publication date

26.11.2018

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Energy Engineering and Power Technology, Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1109/PVSC.2018.8547889 (Access: Closed)