Detachment yield statistics for kerfless wafering using the porous silicon process
- authored by
- C. Gemmel, J. Hensen, S. Kajari-Schröder, Rolf Brendel
- Abstract
The porous silicon (PSI) process is a wafering method to fabricate high quality kerfless crystalline Si wafers by epitaxial wafer growth on porous Si and subsequent detachment from a reusable substrate wafer. The process yield is a key parameter for the economic viability of the PSI process. We experimentally demonstrate the detachment of 59 out of 62 PSI wafers with a size of 10 × 10 cm2, and separation layer etch current densities of 105–120 mA/cm2 for electrochemically etching the porous Si, and for substrate wafers with a resistivity of 15.7–16.9 mΩcm. We discuss the statistics of how to deduce a detachment probability from this. From our experiments, we determine a detachment yield of at least 88% with an error probability of 5%. The demonstration of a 99% detachment yield with an error probability of 5% would require at least 300 successfully detached wafers with no failed detachment. Samples have a minority carrier density ranging from 1 to 1.7 ms before any external gettering, which demonstrates the high electric quality of the PSI wafers.
- Organisation(s)
-
Solar Energy Section
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- Solar Energy Materials and Solar Cells
- Volume
- 202
- ISSN
- 0927-0248
- Publication date
- 11.2019
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1016/j.solmat.2019.110061 (Access:
Closed)
