A simple physical model for three-terminal tandem cell operation

authored by
Paul Stradins, Michael Rienaecker, Robby Peibst, Adele Tamboli, Emily Warren
Abstract

We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide "generating" power islands in the 2D current J1J2 plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.

External Organisation(s)
National Renewable Energy Laboratory
Institute for Solar Energy Research (ISFH)
Type
Conference contribution
Pages
2176-2178
No. of pages
3
Publication date
06.2019
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Control and Systems Engineering, Industrial and Manufacturing Engineering, Electrical and Electronic Engineering
Sustainable Development Goals
SDG 7 - Affordable and Clean Energy
Electronic version(s)
https://doi.org/10.1109/PVSC40753.2019.8980595 (Access: Closed)