Dopant diffusion from p ⁺ -poly-Si into c-Si during thermal annealing

authored by

Jan Krugener, Yevgeniya Larionova, Dominic Tetzlaff, Bettina Wolpensinger, Sina Reiter, Mircea Turcu, Robby Peibst, Jan Dirk Kahler, Tobias Wietler

Abstract

Passivating junctions, like hole-collecting p-polycrystalline silicon/SiO _x /crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm ² for in situ p ⁺ doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in- diffused region within the substrate are electrically connected.

Organisation(s)

Institute of Electronic Materials and Devices
Laboratory of Nano and Quantum Engineering

External Organisation(s)

Institute for Solar Energy Research (ISFH)
Centrotherm International AG

Type

Conference contribution

Pages

1140-1142

No. of pages

3

Publication date

2017

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1109/pvsc.2017.8366566 (Access: Closed)