Formation of highly aluminum-doped p-type silicon regions by in-line high-rate evaporation
- authored by
- Christoph Mader, Robert Bock, Jan Schmidt, Rolf Brendel
- Abstract
Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 °C during deposition an Al-doped p region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695±65 fA/cm2 for the fully metalized Al-p regions, which corresponds to an implied solar cell open-circuit voltage of 635±2 mV.
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- Solar Energy Materials and Solar Cells
- Volume
- 95
- Pages
- 1720-1722
- No. of pages
- 3
- ISSN
- 0927-0248
- Publication date
- 07.2011
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1016/j.solmat.2011.01.039 (Access:
Closed)
