Temperature of silicon wafers during in-line high-rate evaporation of aluminum

authored by

Christoph Mader, Michael Kessler, Ulrich Eitner, Rolf Brendel

Abstract

Knowing the substrate temperature during in-line high-rate Al deposition onto silicon solar cells is essential for understanding and improving the deposition process. We deposit 2 and 5 μm-thick aluminum layers at a dynamic deposition rate of 5 μm m/min onto 130 and 180 μm-thick, planar and pyramidally textured, p-type silicon wafers and measure the wafer temperature during the deposition. The temperature depends on the aluminum layer thickness, the wafer thickness, and the wafer emissivity. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 3%.

Organisation(s)

Institute of Solid State Physics

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Solar Energy Materials and Solar Cells

Volume

95

Pages

3047-3053

No. of pages

7

ISSN

0927-0248

Publication date

11.2011

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1016/j.solmat.2011.06.031 (Access: Closed)