Easy-to-use surface passivation technique for bulk carrier lifetime measurements on silicon wafers

authored by

Jan Schmidt, Armin G. Aberle

Abstract

A novel, easily applicable surface passivation technique is presented, which, in combination with contactless photocoductance decay (PCD) measurements, allows a quick estimation of the bulk carrier lifetime of crystalline silicon wafers. The proposed passivation technique requires neither a chemical pre-cleaning of the silicon wafer nor expensive instrumentation. On both surfaces of the wafer a thin varnish film is deposited using a spinner. Subsequently, both surfaces of the coated silicon wafer are charged by means of a corona chamber. Using microwave-detected PCD measurements, we experimentally demonstrate that this novel surface passivation scheme provides differential surface recombination velocities in the 30-70 cm s^-1 range on p-as well as n-type silicon wafers.

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Progress in Photovoltaics: Research and Applications

Volume

6

Pages

259-263

No. of pages

5

ISSN

1062-7995

Publication date

21.12.1998

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1002/(SICI)1099-159X(199807/08)6:4<259::AID-PIP215>3.0.CO;2-Z (Access: Closed)