P+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications

authored by

Robby Peibst, Michael Rienäcker, Byungsul Min, Christina Klamt, Raphael Niepelt, Tobias Wietler, Thorsten Dullweber, Eduard Sauter, Jens Hübner, Michael Oestreich, Rolf Brendel

Abstract

We present a novel cell concept that combines the tandem cell approach with the PERC mainstream technology. As an interface between Si bottom and top cell, we utilize passivating \text{n} {mathbf {+}}-type polysilicon on oxide (POLO) contacts and a p+ poly-Si / n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process {mathbf {sequence\, where\, the\, POCl}}3{mathbf {-diffusion\, and\, SiN}} \mathbf {x}deposition are replaced by the POLO junction formation processes. The implied {mathbf {open\, circuit\, voltage\, iV}} \mathbf {oc} measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum), respectively.

Organisation(s)

Institute of Solid State Physics
Nanostructures Section

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Conference contribution

Pages

2635-2637

No. of pages

3

Publication date

26.11.2018

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Energy Engineering and Power Technology, Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1109/pvsc.2018.8548032 (Access: Closed)