Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al₂O₃

authored by

J. Schmidt, A. Merkle, R. Brendel, B. Hoex, M. C.M. Van De Sanden, W. M.M. Kessels

Abstract

Atomic-layer-deposited aluminium oxide (Al₂O₃) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al₂O₃ is confirmed on the device level by an independently confirmed energy conversion efficiency of 20 6%. The best results are obtained for a stack consisting of a 30 nm Al₂O₃ film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiO_x) layer, resulting in a rear surface recombination velocity (SRV) of 70cm/s. Comparable results are obtained for a 130 nm single-layer of Al ₂O₃, resulting in a rear SRV of 90 cm/s.

External Organisation(s)

Institute for Solar Energy Research (ISFH)
Eindhoven University of Technology (TU/e)

Type

Article

Journal

Progress in Photovoltaics: Research and Applications

Volume

16

Pages

461-466

No. of pages

6

ISSN

1062-7995

Publication date

09.2008

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1002/pip.823 (Access: Closed)