Modeling effective carrier lifetimes of passivated macroporous silicon layers

authored by

Marco Ernst, Rolf Brendel

Abstract

We derive and apply a model that determines the effective minority carrier lifetime of macroporous crystalline silicon samples as a function of bulk lifetime, surface passivation and pore morphology. Two cases are considered: A layer of periodic macropores at the surface of a silicon wafer and a free standing macroporous silicon layer. We compare the model with experimental lifetime measurements for samples with randomly positioned macropores with a length of 1040 μm. The pores have an average pore diameter of 2.4 μm and an average pore distance of 5.2 μm. The surface is passivated by thermal oxidation. The model agrees with the measurements if we assume an average surface recombination velocity S=24 cm/s at the pore surface.

Organisation(s)

Solar Energy Section

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Solar Energy Materials and Solar Cells

Volume

95

Pages

1197-1202

No. of pages

6

ISSN

0927-0248

Publication date

04.2011

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1016/j.solmat.2011.01.017 (Access: Closed)