Direct laser texturing for high-efficiency silicon solar cells
- authored by
- Dimitri Zielke, David Sylla, Tobias Neubert, Rolf Brendel, Jan Schmidt
- Abstract
We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm 2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
- Organisation(s)
-
Solar Energy Section
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- IEEE journal of photovoltaics
- Volume
- 3
- Pages
- 656-661
- No. of pages
- 6
- ISSN
- 2156-3381
- Publication date
- 2013
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/JPHOTOV.2012.2228302 (Access:
Unknown)
