Ultrafast atomic layer deposition of alumina layers for solar cell passivation
- authored by
- P. Poodt, V. Tiba, F. Werner, J. Schmidt, A. Vermeer, F. Roozeboom
- Abstract
An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h.
- External Organisation(s)
-
Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek (TNO)
Institute for Solar Energy Research (ISFH)
SoLayTec
Eindhoven University of Technology (TU/e)
- Type
- Article
- Journal
- Journal of the Electrochemical Society
- Volume
- 158
- Pages
- H937-H940
- ISSN
- 0013-4651
- Publication date
- 20.07.2011
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films, Electrochemistry, Materials Chemistry
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1149/1.3610994 (Access:
Closed)
https://pure.tue.nl/ws/files/3605326/Metis255330.pdf (Access: Open)
