19%-efficient and 43 μm-thick crystalline Si solar cell from layer transfer using porous silicon
- authored by
- Jan Hendrik Petermann, Dimitri Zielke, Jan Schmidt, Felix Haase, Enrique Garralaga Rojas, Rolf Brendel
- Abstract
We present a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm 2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short-circuit current density of 37.8 mA cm -2, an open-circuit voltage of 650 mV, and a fill factor of 77.6%.
- Organisation(s)
-
Institute of Solid State Physics
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- Progress in Photovoltaics: Research and Applications
- Volume
- 20
- Pages
- 1-5
- No. of pages
- 5
- ISSN
- 1062-7995
- Publication date
- 29.12.2011
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1002/pip.1129 (Access:
Closed)
