UV radiation hardness of photovoltaic modules featuring crystalline Si solar cells with AlO_x/p⁺-type Si and SiN_y/n⁺-type Si interfaces

authored by

Robert Witteck, Byungsul Min, Henning Schulte-Huxel, Hendrik Holst, Boris Veith-Wolf, Fabian Kiefer, Malte R. Vogt, Marc Köntges, Robby Peibst, Rolf Brendel

Abstract

We report on the UV radiation hardness of photovoltaic modules with bifacial n-type Passivated Emitter and Rear Totally diffused crystalline Si cells that are embedded in an encapsulation polymer with enhanced UV transparency. Modules with front junction cells featuring an AlO_x/p⁺-type Si passivation interface at the illuminated side are stable for a UV irradiation dose of 598 kWh m⁻². In contrast, irradiating modules with back junction cells featuring an a-SiN_y/n⁺-type Si passivation interface at the illuminated side reduces the output power by 15%. The quantum efficiency of the a-SiN_y-passivated module degrades in the spectral range between 300 and 1000 nm, which we ascribe to a degradation of the surface passivation. Modeling the experimental data shows that photons with an energy above 3.4 eV contribute to the degradation effect and enhance the front surface recombination current density by a factor of 15.

Organisation(s)

Institute of Electronic Materials and Devices
Institute of Solid State Physics

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Letter

Journal

Physica Status Solidi - Rapid Research Letters

Volume

11

ISSN

1862-6254

Publication date

08.2017

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Materials Science(all), Condensed Matter Physics

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1002/pssr.201700178 (Access: Closed)