UV radiation hardness of photovoltaic modules featuring crystalline Si solar cells with AlOx/p+-type Si and SiNy/n+-type Si interfaces

verfasst von
Robert Witteck, Byungsul Min, Henning Schulte-Huxel, Hendrik Holst, Boris Veith-Wolf, Fabian Kiefer, Malte R. Vogt, Marc Köntges, Robby Peibst, Rolf Brendel
Abstract

We report on the UV radiation hardness of photovoltaic modules with bifacial n-type Passivated Emitter and Rear Totally diffused crystalline Si cells that are embedded in an encapsulation polymer with enhanced UV transparency. Modules with front junction cells featuring an AlOx/p+-type Si passivation interface at the illuminated side are stable for a UV irradiation dose of 598 kWh m−2. In contrast, irradiating modules with back junction cells featuring an a-SiNy/n+-type Si passivation interface at the illuminated side reduces the output power by 15%. The quantum efficiency of the a-SiNy-passivated module degrades in the spectral range between 300 and 1000 nm, which we ascribe to a degradation of the surface passivation. Modeling the experimental data shows that photons with an energy above 3.4 eV contribute to the degradation effect and enhance the front surface recombination current density by a factor of 15.

Organisationseinheit(en)
Institut für Materialien und Bauelemente der Elektronik
Institut für Festkörperphysik
Externe Organisation(en)
Institut für Solarenergieforschung GmbH (ISFH)
Typ
Letter
Journal
Physica Status Solidi - Rapid Research Letters
Band
11
ISSN
1862-6254
Publikationsdatum
08.2017
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Werkstoffwissenschaften (insg.), Physik der kondensierten Materie
Ziele für nachhaltige Entwicklung
SDG 7 – Erschwingliche und saubere Energie
Elektronische Version(en)
https://doi.org/10.1002/pssr.201700178 (Zugang: Geschlossen)