Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers
- authored by
- Robert Witteck, Henning Schulte-Huxel, Boris Veith-Wolf, Malte Ruben Vogt, Fabian Kiefer, Marc Köntges, Robby Peibst, Rolf Brendel
- Abstract
We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.
- Organisation(s)
-
Institute of Electronic Materials and Devices
Institute of Solid State Physics
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Conference contribution
- Pages
- 1366-1370
- No. of pages
- 5
- Publication date
- 2017
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/PVSC.2017.8366019 (Access:
Closed)
