Recombination behavior and contact resistance of n⁺ and p⁺ poly-crystalline Si/mono-crystalline Si junctions

authored by

Udo Römer, Robby Peibst, Tobias Ohrdes, Bianca Lim, Jan Krügener, Eberhard Bugiel, Tobias Wietler, Rolf Brendel

Abstract

We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm² and low specific contact resistances <0.1 ω cm². The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm².

Organisation(s)

Institute of Electronic Materials and Devices

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Solar Energy Materials and Solar Cells

Volume

131

Pages

85-91

No. of pages

7

ISSN

0927-0248

Publication date

12.2014

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1016/j.solmat.2014.06.003 (Access: Closed)