GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage

authored by

Tobias Brinker, Hendrik Gräber, Jens Friebe

Abstract

This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.

Organisation(s)

Institute of Drive Systems and Power Electronics

Type

Conference contribution

Publication date

2022

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Energy Engineering and Power Technology, Electrical and Electronic Engineering

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://ieeexplore.ieee.org/document/9907679/authors#authors (Access: Closed)