GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage

verfasst von

Tobias Brinker, Hendrik Gräber, Jens Friebe

Abstract

This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.

Organisationseinheit(en)

Institut für Antriebssysteme und Leistungselektronik

Typ

Aufsatz in Konferenzband

Publikationsdatum

2022

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Energieanlagenbau und Kraftwerkstechnik, Elektrotechnik und Elektronik

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://ieeexplore.ieee.org/document/9907679/authors#authors (Zugang: Geschlossen)