Numerical simulations of buried emitter back-junction solar cells

authored by

Nils P. Harder, Verena Mertens, Rolf Brendel

Abstract

We recently introduced the buried emitter back-junction solar cell, featuring large area fractions of overlap between n ⁺-type and p ⁺-type regions at the rear side of the device. In this paper we analyse the performance of the buried emitter solar cell (BESC) and its generalisations by one-dimensional device simulations and analytical model calculations. A key finding is that the generalised versions of the BESC structure allows achieving very high efficiencies by passivating virtually the entire surface of p-type emitters by an oxidised n-type surface layer. A disadvantage of this type of full-area emitter passivation in the generalised back-junction BESC is the need for an insulating layer between the metallisation of the emitter and the contact to the base, which is technologically difficult to achieve.

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Progress in Photovoltaics: Research and Applications

Volume

17

Pages

253-263

No. of pages

11

ISSN

1062-7995

Publication date

06.2009

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1002/pip.887 (Access: Closed)