Numerical simulations of buried emitter back-junction solar cells

verfasst von

Nils P. Harder, Verena Mertens, Rolf Brendel

Abstract

We recently introduced the buried emitter back-junction solar cell, featuring large area fractions of overlap between n ⁺-type and p ⁺-type regions at the rear side of the device. In this paper we analyse the performance of the buried emitter solar cell (BESC) and its generalisations by one-dimensional device simulations and analytical model calculations. A key finding is that the generalised versions of the BESC structure allows achieving very high efficiencies by passivating virtually the entire surface of p-type emitters by an oxidised n-type surface layer. A disadvantage of this type of full-area emitter passivation in the generalised back-junction BESC is the need for an insulating layer between the metallisation of the emitter and the contact to the base, which is technologically difficult to achieve.

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

Progress in Photovoltaics: Research and Applications

Band

17

Seiten

253-263

Anzahl der Seiten

11

ISSN

1062-7995

Publikationsdatum

06.2009

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Physik der kondensierten Materie, Elektrotechnik und Elektronik

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1002/pip.887 (Zugang: Geschlossen)