Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters
- authored by
- Jan Krugener, Robby Peibst, Wolf Alexander, Eberhard Bugiel, Tobias Ohrdes, Fabian Kiefer, Claus Schollhorn, Andreas Grohe, Rolf Brendel, Hans-Jörg Osten
- Abstract
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).
- Organisation(s)
-
Institute of Electronic Materials and Devices
Laboratory of Nano and Quantum Engineering
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
Robert Bosch GmbH
Bosch Solar Energy AG
- Type
- Article
- Journal
- IEEE journal of photovoltaics
- Volume
- 5
- Pages
- 166-173
- No. of pages
- 8
- ISSN
- 2156-3381
- Publication date
- 01.01.2015
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/jphotov.2014.2365468 (Access:
Closed)
