High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

authored by

Lars Oberbeck, Jan Schmidt, Thomas A. Wagner, Ralf B. Bergmann

Abstract

Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin-film Si solar cell with a 20-μm-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps.

External Organisation(s)

University of Stuttgart

Type

Article

Journal

Progress in Photovoltaics: Research and Applications

Volume

9

Pages

333-340

No. of pages

8

ISSN

1062-7995

Publication date

17.09.2001

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1002/pip.385 (Access: Closed)