A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing

authored by

Achim Seidel, Bernhard Wicht

Abstract

More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ∼10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ∼15V for Si.

External Organisation(s)

Reutlingen University

Type

Conference contribution

Pages

432-433

No. of pages

2

Publication date

2017

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1109/ISSCC.2017.7870446 (Access: Closed)