19% efficient n-type czochralski silicon solar cells with screen-printed aluminium-alloyed rear emitter
- authored by
- Christian Schmiga, Jan Schmidt, Henning Nagel
- Abstract
High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
Schott AG
- Type
- Article
- Journal
- Progress in Photovoltaics: Research and Applications
- Volume
- 14
- Pages
- 533-539
- No. of pages
- 7
- ISSN
- 1062-7995
- Publication date
- 09.2006
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1002/pip.725 (Access:
Unknown)
