19% efficient n-type czochralski silicon solar cells with screen-printed aluminium-alloyed rear emitter
- verfasst von
- Christian Schmiga, Jan Schmidt, Henning Nagel
- Abstract
High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
- Externe Organisation(en)
-
Institut für Solarenergieforschung GmbH (ISFH)
Schott Solar AG
- Typ
- Artikel
- Journal
- Progress in Photovoltaics: Research and Applications
- Band
- 14
- Seiten
- 533-539
- Anzahl der Seiten
- 7
- ISSN
- 1062-7995
- Publikationsdatum
- 09.2006
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Physik der kondensierten Materie, Elektrotechnik und Elektronik
- Ziele für nachhaltige Entwicklung
- SDG 7 – Erschwingliche und saubere Energie
- Elektronische Version(en)
-
https://doi.org/10.1002/pip.725 (Zugang:
Unbekannt)
