Evolution of oxide disruptions
The (W)hole story about poly-Si / c-Si passivating contacts
- authored by
- Dominic Tetzlaff, Jan Krugener, Yevgeniya Larionova, Sina Reiter, Mircea Turcu, Robby Peibst, Uwe Hohne, Jan Dirk Kahler, Tobias Wietler
- Abstract
Different models exist describing the current transport in polycrystalline Si/SiO x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
- Organisation(s)
-
Institute of Electronic Materials and Devices
Laboratory of Nano and Quantum Engineering
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
Centrotherm International AG
- Type
- Conference contribution
- Pages
- 963-965
- No. of pages
- 3
- Publication date
- 2017
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/pvsc.2017.8366522 (Access:
Closed)
