Co silicide formation on epitaxial Si_1-yC_y/Si (001) layers

verfasst von

Y. Roichman, A. Berner, R. Brener, C. Cytermann, D. Shilo, E. Zolotoyabko, M. Eizenberg, H. J. Osten

Abstract

We investigated the formation and structure of cobalt suicide (CoSi₂) on Si_1-yC_y. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi₂ is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi₂ grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi₂ is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi₂ nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi₂ layer thickness; (v) no strain relaxation in the Si_1-yC_y layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi₂ on Si_1-yC_y for device application despite the mentioned inhomogeneity in CoSi₂ microstructure.

Externe Organisation(en)

Technion-Israel Institute of Technology
Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Journal of applied physics

Band

87

Seiten

3306-3312

Anzahl der Seiten

7

ISSN

0021-8979

Publikationsdatum

01.04.2000

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Ziele für nachhaltige Entwicklung

SDG 3 – Gute Gesundheit und Wohlergehen

Elektronische Version(en)

https://doi.org/10.1063/1.372341 (Zugang: Geschlossen)