Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

verfasst von

Felix Haase, Christina Hollemann, Soren Schafer, Jan Krügener, Rolf Brendel, Robby Peibst

Abstract

We report on the transfer of our lab-type POLO²-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik
Laboratorium für Nano- und Quantenengineering
Institut für Festkörperphysik

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Aufsatz in Konferenzband

Seiten

2200-2206

Anzahl der Seiten

7

Publikationsdatum

06.2019

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Steuerungs- und Systemtechnik, Wirtschaftsingenieurwesen und Fertigungstechnik, Elektrotechnik und Elektronik

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1109/pvsc40753.2019.8980960 (Zugang: Geschlossen)