Emitter recombination current densities of boron emitters with silver/aluminum pastes

verfasst von

Fabian Kiefer, Robby Peibst, Tobias Ohrdes, Jan Krügener, H. Jörg Osten, Rolf Brendel

Abstract

In this work, we investigate the recombination current density of ion-implanted boron emitters, which are contacted with a screen printed silver/aluminum paste. Depending on the peak doping concentration and on the depth of the doping profile, we measure a significantly increased recombination current density below those contacts of up to 3500 fA/cm². This is 3.8 times higher than the expectations obtained from device simulations. The metallized emitter surface recombination is lower when using an emitter with higher front side doping or deeper emitter doping profile. We present two approaches to reduce the recombination losses due to the metallization: (a) dual print with a non-firing busbar paste and fineline fingers yields a gain in efficiency of 0.4 % and (b) selective emitters with a higher emitter doping level underneath the front contacts and a lower doping in the intra-finger regions yield a gain in short-circuit current and open-circuit voltage compared to homogeneous emitters.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik
Institut für Festkörperphysik

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Aufsatz in Konferenzband

Seiten

2808-2812

Anzahl der Seiten

5

Publikationsdatum

15.10.2014

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektrotechnik und Elektronik, Elektronische, optische und magnetische Materialien

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1109/pvsc.2014.6925514 (Zugang: Geschlossen)