Impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in crystalline silicon

verfasst von

Lailah Helmich, Dominic C. Walter, Robert Falster, Vladimir V. Voronkov, Jan Schmidt

Abstract

We examine the impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in boron-doped p-type Czochralski-grown silicon wafers. We introduce the hydrogen into the silicon bulk by rapid thermal annealing. The hydrogen source are hydrogen-rich silicon nitride (SiN

_x:H) layers. Aluminum oxide (Al

₂O

₃) layers of varying thickness are placed in-between the silicon wafer surfaces and the SiN

_x:H layers. By varying the Al

₂O

₃ thickness, which acts as an effective hydrogen diffusion barrier, the hydrogen bulk content is varied over more than one order of magnitude. The hydrogen content is determined from measured wafer resistivity changes. In order to examine the impact of hydrogen on the degradation kinetics, all samples are illuminated at a light intensity of 0.1 suns near room temperature. We observe no impact of the in-diffused hydrogen content on the degradation rate constant, confirming that hydrogen is not involved in the boron-oxygen degradation mechanism. The regeneration experiments at 160°C and 1 sun, however, show a clear dependence on the hydrogen content with a linear increase of the regeneration rate constant with increasing bulk hydrogen concentration. However, extrapolation of our measurements toward a zero in-diffused hydrogen content shows that the regeneration is still working even without any in-diffused hydrogen. Hence, our measurements demonstrate that there are two distinct regeneration processes taking place. This is in good agreement with a recently proposed defect reaction model and is also in agreement with the finding that the permanent boron-oxygen deactivation also works on non-fired solar cells, though at a lower rate.

Organisationseinheit(en)

Abt. Solarenergie

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

Solar Energy Materials and Solar Cells

Band

232

ISSN

0927-0248

Publikationsdatum

10.2021

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Oberflächen, Beschichtungen und Folien

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1016/j.solmat.2021.111340 (Zugang: Geschlossen)