Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance
- verfasst von
- Michael Rienacker, Marcel Bossmeyer, Agnes Merkle, Udo Romer, Felix Haase, Jan Krugener, Rolf Brendel, Robby Peibst
- Abstract
We investigate the junction resistivity of high quality carrier selective polysilicon on oxide (POLO) junctions with the transfer length method. We demonstrate n + POLO junctions with a saturation current density J c, poly of 6.2 fA/cm 2 and junction resistivity p c of 0.6 mΩcm 2 , counterdoped n + POLO junctions with 2.7 fA/cm 2 and 1.3 mΩcm 2 , and p + POLO junctions with 6.7 fA/cm 2 and 0.2 mΩcm 2 . Such low junction resistivities and saturation current densities correspond to excellent selectivities of up to 16.2 and imply a contribution of only a few mΩcm 2 to the total series resistance of the cell, enabling an efficiency potential larger than 26 %, which was estimated by numerical device simulations. We demonstrate experimentally a back-junction back contacted solar cell with p-type and n-type POLO junctions with an efficiency of 23.9 %. This efficiency is the largest reported so far for cells with polysilicon junctions for both contacts and it is limited by the passivation of undoped regions.
- Organisationseinheit(en)
-
Institut für Materialien und Bauelemente der Elektronik
Institut für Festkörperphysik
- Externe Organisation(en)
-
University of New South Wales (UNSW)
Institut für Solarenergieforschung GmbH (ISFH)
- Typ
- Artikel
- Journal
- IEEE Journal of Photovoltaics
- Band
- 7
- Seiten
- 11-18
- Anzahl der Seiten
- 8
- ISSN
- 2156-3381
- Publikationsdatum
- 01.2017
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Elektrotechnik und Elektronik
- Ziele für nachhaltige Entwicklung
- SDG 7 – Erschwingliche und saubere Energie
- Elektronische Version(en)
-
https://doi.org/10.1109/PVSC.2017.8366491 (Zugang:
Geschlossen)
https://doi.org/10.1109/JPHOTOV.2016.2614123 (Zugang: Geschlossen)
