Point contact openings in surface passivated macroporous silicon layers

verfasst von

Marco Ernst, Urs Zywietz, Rolf Brendel

Abstract

In this paper we demonstrate the preparation of point contact openings in surface passivated macroporous silicon layers. In our experiments we control the etching parameters to vary the percentage of these non-passivated local openings from 0% to 1.6%. We investigate the impact of these local openings in the passivating layer on the effective carrier lifetime. These local openings reduce the measured effective carrier lifetime with increasing percentage of the non-passivated areas. We measure effective carrier lifetimes up to 10 μs on 29 μm-thick fully passivated macroporous silicon samples. We develop and apply a 3-dimensional numerical model to calculate carrier lifetimes as a function of pore morphology, surface recombination, percentage of non-passivated area, and bulk lifetime. The model agrees with the experimental measurements. We find a surface recombination velocity of (S _pass=22.8 _-1.4 ^1.6) cm s ^-1 for the passivated surfaces and S _np=(2200 _-1400 ¹⁵⁰⁰) cm s ^-1 for the non-passivated surface.

Organisationseinheit(en)

Abt. Solarenergie

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)
Laser Zentrum Hannover e.V. (LZH)

Typ

Artikel

Journal

Solar Energy Materials and Solar Cells

Band

105

Seiten

113-118

Anzahl der Seiten

6

ISSN

0927-0248

Publikationsdatum

10.2012

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Oberflächen, Beschichtungen und Folien

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1016/j.solmat.2012.05.033 (Zugang: Geschlossen)