A simple model describing the symmetric I-V characteristics of p polycrystalline Si/n monocrystalline Si, and n polycrystalline Si/p monocrystalline Si junctions

verfasst von

Robby Peibst, Udo Römer, Karl Rudiger Hofmann, Bianca Lim, Tobias F. Wietler, Jan Krügener, Nils Peter Harder, Rolf Brendel

Abstract

We present an analytical model for the current transport in polycrystalline (poly)Si/interfacial oxide/monocrystalline (c)-Si base junctions, which consistently describes the symmetrical behavior of an n⁺ poly-Si emitter/p c -Si base and p⁺ poly-Si emitter/ n c-Si base configuration. Our model is focused on a regime within which the current transport is possibly dominated by a flow through oxide pinholes rather than by tunneling. For an emitter region assumed to form underneath the interfacial oxide by diffusion of dopants from the poly-Si into the c-Si, we calculate the minority charge carrier distribution and the resistance implied for majority charge carriers. With reasonable parameters, our model simultaneously reproduces the experimentally observed low emitter saturation current densities and low junction resistances values. Our model provides a plausible explanation for the high current gain observed in p-n-p and n-p-n bipolar transistors featuring a poly-Si emitter. In principle, the obtained correlation between recombination current and series resistance is analogous to the situation in a base region of a solar cell with local rear contacts. Thus, a poly-Si/c-Si junction can be explained within the framework of a classical p-n junction picture for a passivated, locally contacted emitter.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

IEEE journal of photovoltaics

Band

4

Seiten

841-850

Anzahl der Seiten

10

ISSN

2156-3381

Publikationsdatum

05.2014

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Elektrotechnik und Elektronik

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1109/jphotov.2014.2310740 (Zugang: Geschlossen)