Light-induced lifetime degradation in high-performance multicrystalline silicon: Detailed kinetics of the defect activation

verfasst von

Dennis Bredemeier, Dominic C. Walter, Jan Schmidt

Abstract

We examine the defect activation kinetics in block-cast high-performance multicrystalline silicon (HP mc-Si) under illumination at elevated temperature. Our lifetime analysis shows that the observed light-induced lifetime degradation consists of two separate stages: a fast stage followed by a slow stage. Our experiments reveal that both degradation stages can be fitted using a sum of two exponential decay functions. The resulting degradation rate constants depend both on the temperature and the light intensity applied during degradation. For the fast component, we determine an activation energy of (0.89 ± 0.04) eV from an Arrhenius plot of the degradation rate and for the slow component we determine a value of (0.94 ± 0.06) eV. The activation energies are relatively large, leading to a very pronounced dependence of the degradation rates on temperature. We also observe that both degradation rates show a linear dependence on the applied light intensity during degradation in the examined intensity range between 0.25 and 1.5 suns.

Organisationseinheit(en)

Institut für Festkörperphysik
Abt. Solarenergie

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

Solar Energy Materials and Solar Cells

Band

173

Seiten

2-5

Anzahl der Seiten

4

ISSN

0927-0248

Publikationsdatum

12.2017

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Oberflächen, Beschichtungen und Folien

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1016/j.solmat.2017.08.007 (Zugang: Geschlossen)