Impurity-related limitations of next-generation industrial silicon solar cells

verfasst von

Jan Schmidt, Bianca Lim, Dominic Walter, Karsten Bothe, Sebastian Gatz, Thorsten Dullweber, Pietro P. Altermatt

Abstract

We apply highly predictive 2-D device simulation to assess the impact of various impurities on the performance of next-generation industrial silicon solar cells. We show that the light-induced boron-oxygen recombination center limits the efficiency to 19.2% on standard Czochralski-grown silicon material. Curing by illumination at elevated temperature is shown to increase the efficiency limit by $+$1.5% absolute to 20.7%. In the second part of this paper, we examine the impact of the most important metallic impurities on the cell efficiency for p-and n-type cells. It is widely believed that solar cells on n-type silicon are less sensitive to metallic impurities. We show that this statement is not generally valid as it is merely based on the properties of Fe but does not account for the properties of Co, Cr, and Ni.

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

IEEE journal of photovoltaics

Band

3

Seiten

114-118

Anzahl der Seiten

5

ISSN

2156-3381

Publikationsdatum

2013

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Elektrotechnik und Elektronik

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1109/JPHOTOV.2012.2210030 (Zugang: Unbekannt)